Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects

Journal of Applied Physics

Volumn 95, Issue 10, 2004, Pages 5545-5582

  Laux, S E ^a   Kumar, A ^a   Fischetti, M V ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; HEAT CONDUCTION; MATHEMATICAL MODELS; PHASE EQUILIBRIA; QUANTUM THEORY; RESONANT TUNNELING; SILICON; SPECTRUM ANALYSIS; VORTEX FLOW;

ELECTRON TRANSPORT (ET); GEOMETRIC EFFECTS; RESONANT TUNNELLING DIODES (RTD); SPACE-CHARGE EFFECTS;

ELECTRON TRANSPORT PROPERTIES;

EID: 2942571688     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1695597     Document Type: Review

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