Quantum transport in carbon nanotube transistors: Complex band structure effects

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1597-1599

  Xia, T S ^a   Register, L F ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; COMPUTER SIMULATION; ELECTRON TUNNELING; ELECTRONIC PROPERTIES; ENERGY GAP; MECHANICAL PROPERTIES; MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

CARBON NANOTUBE FIELD EFFECT TRANSISTOR; MOLECULAR TRANSISTOR; QUANTUM TRANSPORT; SUBTHRESHOLD DRAIN CURRENT;

FIELD EFFECT TRANSISTORS;

EID: 1142268099     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1631747     Document Type: Article

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