Silicon CMOS devices beyond scaling

IBM Journal of Research and Development

Volumn 50, Issue 4-5, 2006, Pages 339-361

  Haensch, Wilfried ^a   Nowak, Edward J ^b   Dennard, Robert H ^a   Solomon, P M ^a   Bryant, Andres ^b   Dokumaci, Omer H ^b   Kumar, Arvind ^a   Wang, Xinlin ^b   Johnson, Jeffrey B ^b   Fischetti, Massimo V ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

^c University of Massachusetts   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN FOR TESTABILITY; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; WSI CIRCUITS;

MOBILITY-ENHANCING MEASURES; MULTI-GATE DEVICES; SILICON DEVICE;

CMOS INTEGRATED CIRCUITS;

EID: 33748582367     PISSN: 00188646     EISSN: 00188646     Source Type: Journal    
DOI: 10.1147/rd.504.0339     Document Type: Article

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