Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 287-290

  Ferry, D K ^a   Akis, R ^a   Vasileska, D ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; MONTE CARLO METHODS; QUANTUM THEORY; THRESHOLD VOLTAGE;

ULTRASHORT CHANNEL DEVICES;

MOSFET DEVICES;

EID: 0034453530     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Scaled silicon MOSFET's: Universal mobility behavior
2. Scaled silicon MOSFET's: Degradation of the total gate capacitance
3. Simulation of ultra-small GaAs MESFET using quantum moment equations
4. Circuit/device modeling at the quantum level
5. Open problems in quantum simulation in ultra-submicron devices
6. The onset of quantization in ultra-submicron semiconductor devices
7. Simulation at the start of the new millennium: Crossing the quantum mechanical threshold
8. Negative field-effect mobility on (100) Si surfaces
9. The influence of space quantization effect on the threshold voltage, inversion layer and total gate capacitance in scaled Si-MOSFETs