Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias

Applied Physics Letters

Volumn 89, Issue 2, 2006, Pages

  Koswatta, Siyuranga O ^a   Hasan, Sayed ^a   Lundstrom, Mark S ^a   Anantram, M P ^b   Nikonov, Dmitri E ^c  

^a PURDUE UNIVERSITY   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-PHONON SCATTERING; GATE BIAS; GATE VOLTAGE; OPTICAL PHONON SCATTERING;

ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; GATES (TRANSISTOR); NANOTUBES; PHONONS; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 33749614917     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218322     Document Type: Article

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