Experimental Study on Carrier Transport Mechanisms in Double- and Single-Gate Ultrathin-Body MOSFETs - Coulomb Scattering, Volume Inversion, and δT SOI-induced Scattering

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 805-808

  Uchida, Ken ^a,b   Koga, Junji ^a   Takagi, Shin ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB SCATTERING; ULTRATHIN CHANNEL;

CARRIER COMMUNICATION; CARRIER MOBILITY; DIODES; ELECTRIC POTENTIAL; ELECTRON TUNNELING; GATES (TRANSISTOR); MODULATION; PHONONS; SCATTERING; SEMICONDUCTING FILMS;

MOSFET DEVICES;

EID: 0842331295     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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