High-field electron mobility model for strained-silicon devices

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 3054-3061

  Dhar, Siddhartha ^a,b   Kosina, Hans ^a,b   Karlowatz, Gerhard ^b   Ungersboeck, Stephan Enzo ^b   Grasser, Tibor ^a,b   Selberherr, Siegfried ^a,b  

^a IEEE   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Device simulation; Full band Monte Carlo simulation; High field electron mobility; Strained silicon; Technology computer aided design (TCAD)

Indexed keywords

DEVICE SIMULATION; FULL BAND MONTE CARLO SIMULATION; HIGH FIELD ELECTRON MOBILITY; STRAINED SILICON; TECHNOLOGY COMPUTER AIDED DESIGN (TCAD);

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; INTERPOLATION; MONTE CARLO METHODS; SILICON;

ELECTRON MOBILITY;

EID: 33947242413     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885639     Document Type: Article

References (25)

1. K. Uchida, R. Zednik, C. Lu, H. Jagannathan, J. McVittie, P. McIntyre, and Y. Nishi, "Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs," in IEDM Tech. Dig., 2004, pp. 229-232.
2. A. Shimizu et al., "Local mechanical-stress control (LMC): A new technique for CMOS performance enhancement," in IEDM Tech. Dig., 2001, pp. 433-436.
3. J. Welser, J. Hoyt, and J. Gibbons, "NMOS and PMOS transistors fabricated in strained-silicon/relaxed silicon-germanium structures," in IEDM Tech. Dig., 1992, pp. 1000-1002.
4. K. Rim, J.-L. Hoyt, and J.-F. Gibbons, "Transconductance enhancement in deep submicron strained Si N-MOSFETs," in IEDM Tech. Dig., 1998, pp. 707-710.
5. J.-L. Hoyt et al., "Strained-silicon MOSFET technology," in IEDM Tech. Dig., 2002, pp. 23-26.
6. A. Lochtefeld and D. Antoniadis, "Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress," IEEE Electron Device Lett., vol. 22, no. 12, pp. 591-593, Dec. 2001.
7. S. Maikap, C. Yu, S. Jan, M. Lee, and C. Liu, "Mechanically strained Si NMOSFETs," IEEE Electron Device Lett., vol. 25, no. 1, pp. 40-42, Jan. 2004.
8. S. Ito et al., "Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design," in IEDM Tech. Dig., 2000, pp. 247-250.
9. S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck, and S. Selberherr, "Electron mobility model for strained-Si devices," IEEE Trans. Electron Devices, vol. 52, no. 4, pp. 527-533, Apr. 2005.
10. VMC 2.0 User's Guide, Institut für Mikroelektronik, Technische Universität Wien, Wien, Austria, 2006. [Online]. Available: http://www. iue.tuwien.ac.at/software
11. y substrates," Phys. Rev. B, Condens. Matter, vol. 48, no. 19, pp. 14276-14287, Nov. 1993.
12. C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Mod. Phys., vol. 55, no. 3, pp. 645-705, Jul. 1983.
13. C. Jungemann and B. Meinerzhagen, Hierarchical Device Simulation The Monte Carlo Perspective. New York: Springer-Verlag, 2003.
14. x substrates," Appl. Phys. Lett., vol. 70, no. 16, pp. 2144-2146, Apr. 1997.
15. C. Canali, G. Ottaviani, and A. Alberigi-Quaranta, "Drift velocity of electrons and holes and associated anisotropic effects in Si," J. Phys. Chem. Solids, vol. 32, no. 8, pp. 1707-1720, 1971.
16. P. Smith, M. Inoue, and J. Frey, "Electron velocity in Si and GaAs at very high electric fields," Appl. Phys. Lett., vol. 37, no. 9, pp. 797-798, Nov. 1980.
17. B. Fischer and K. Hofmann, "Full band Monte Carlo model for electron and hole transport in strained Si including inelastic acoustic phonon scattering," Appl. Phys. Lett., vol. 74, no. 15, pp. 2185-2187, Apr. 1999.
18. K. Ismail, S. Nelson, J. Chu, and B. Meyerson, "Electron transport properties of Si/SiGe heterostructures: Measurements and device applications," Appl. Phys. Lett., vol. 63, no. 5, pp. 660-662, Aug. 1993.
19. W. Hänsch, The Drift Diffusion Equation and its Application in MOSFET Modeling. New York: Springer-Verlag, 1991.
20. I. Balslev, "Influence of uniaxial stress on the indirect absorption edge in silicon and germanium," Phys. Rev., vol. 143, no. 2, pp. 636-647, Mar. 1966.
21. MINIMOS-NT 2.1 User's Guide, Technische Universität Wien, Wien, Austria, 2004.
22. S. Dhar, G. Karlowatz, E. Ungersboeck, and H. Kosina, "Numerical and analytical modeling of the high-field electron mobility in strained Si," in Proc. SISPAD, 2005, pp. 223-226.
23. MATLAB - Language of Technical Computing, User's Guide, Release 14.0, MathWorks, Inc., Natick, MA, 2004. [Online]. Available: http://www.mathworks.com/
24. D. L. Scharfetter and H. K. Gummel, "Large signal analysis of a silicon read diode oscillator," IEEE Trans. Electron Devices, vol. ED-16, no. 1, pp. 64-77, Jan. 1969.
25. J. Egley and D. Chidambarao, "Strain effects on device characteristics: Implementation in drift-diffusion simulators," Solid State Electron., vol. 36, no. 12, pp. 1653-1664, Dec. 1993.