Quantum mechanical analysis of channel access geometry and series resistance in nanoscale transistors

Journal of Applied Physics

Volumn 95, Issue 1, 2004, Pages 292-305

  Venugopal, R ^a   Goasguen, S ^a   Datta, S ^a   Lundstrom, M S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRON SCATTERING; GREEN'S FUNCTION; HAMILTONIANS; NANOSTRUCTURED MATERIALS; PHASE EQUILIBRIA; POISSON EQUATION; QUANTUM THEORY; TWO DIMENSIONAL;

CHANNEL ACCESS GEOMETRY; DOMAIN DECOMPOSITION ALGORITHMS; NANOSCALE TRANSISTORS; QUANTUM MECHANICAL ANALYSIS; SERIES RESISTANCE; TWO DIMENSIONAL QUANTUM MECHANICAL SIMULATION;

TRANSISTORS;

EID: 0942300861     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1631754     Document Type: Article

References (28)

1. B. Doris et al., IEDM Tech. Dig. 2002, 267 (2002).
2. www.intel.co/labs (2001).
3. S. Datta, J. Phys.: Condens. Matter 2, 8023 (1990).
4. S. Datta, Superlattices Microstruct. 28, 253 (2000).
5. H. Majima, Y. Saito, and T. Hiramoto, IEDM Tech. Dig. 2001, 733 (2001).
6. M. Je, S. Han, I. Kim, and H. Shin, Solid-State Electron. 44, 2207 (2000).
7. Y. Cui, Z. Zhong, D. Wang, W. Wang, and C. Lieber, Nano Lett. 3, 149 (2003).
8. M. Buttiker, Phys. Rev. Lett. 57, 1761 (1986).
9. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge Univesity Press, London, 1997).
10. M. Lundstrom, IEEE Electron Device Lett. 3, 293 (2001).
11. R. Ohba and T. Mizuno, IEEE Trans. Electron Devices 3, 338 (2001).
12. R. Venugopal, Z. Ren, D. Jovanovic, S. Datta, and M. Lundstrom, J. Appl. Phys. 92, 3730 (2002).
13. A. Svizhenko, M. Anantram, T. Govindan, B. Biegel, and R. Venugopal, J. Appl. Phys. 91, 2343 (2002).
14. A. Szafer and A. Stone, Phys. Rev. Lett. 62, 300 (1989).
15. S. Nonoyama, K. Ishibashi, Y. Aoyagi, and S. Namba, Appl. Phys. Lett. 60, 234 (1992).
16. P. Damle, A. Ghosh, and S. Datta, in Molecular Electronics (American Scientific, Stevenson Ranch, CA, 2003).
17. R. K. Lake and S. Datta, Phys. Rev. B 45, 6670 (1992).
18. R. Venugopal, M. Paulsson, S. Goasguen, S. Datta, and M. Lundstrom, J. Appl. Phys. 93, 5613 (2003).
19. C. Texier and M. Buttiker, Phys. Rev. B 62, 7454 (2000).
20. www.itrs.net (2001).
21. J. Fernandez, in Lecture Notes in Computer Science (Springer, Berlin, 2002).
22. Y. Taur and T. Ning, Fundamentals of VLSI Devices (Cambridge University Press, Cambridge, UK, 1998).
23. S. Laux, A. Kumar, and M. Fischetti, IEDM Tech. Dig. 2002, 715 (2002).
24. S. Laux, A. Kumar, and M. Fischetti, IEEE Trans. Nanotechnology 1, 255 (2002).
25. J. Rhew, Z. Ren, and M. Lundstrom, Solid-State Electron. 46, 1899 (2002).
26. R. Venugopal, Z. Ren, and M. Lundstrom, IEEE Trans. Nanoelectron. (to be published).
27. Z. Ren, R. Venugopal, S. Datta, and M. Lundstrom, IEDM Tech. Dig. 2001, 107 (2001).
28. S. Hasan, J. Wang, and M. Lundstrom, IEEE Trans. Electron. Devices (submitted).