On the problem of generalizing the semiconductor Bloch equation from a closed to an open system

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 11, 2003, Pages 1133111-1133114

  Zaccaria, Remo Proietti ^a   Rossi, Fausto ^a  

^a POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ENERGY; MATHEMATICAL MODEL; QUANTUM MECHANICS; QUANTUM THEORY; SEMICONDUCTOR; SIMULATION;

EID: 34547926160     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

1. See, e.g., C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulations (Springer, Wien, 1989).
2. See, e.g., Theory of Transport Properties of Semiconductor Nanostructures, edited by E. Schöll (Chapman and Hall, London, 1998).
3. See, e.g., R.C. Iotti and F. Rossi, Phys. Rev. Lett. 87, 146603 (2001).
4. See, e.g., W. Frensley, Rev. Mod. Phys. 62, 745 (1990), and references therein.
5. See, e.g., F. Rossi and T. Kuhn, Rev. Mod. Phys. 74, 895 (2002), and references therein.
6. F. Rossi, A. Di Carlo, and p. Lugli, Phys. Rev. Lett. 80, 3348 (1998).
7. See, e.g., in Computational Electronics, special issue of VLSI design 13, 1 (2001).
8. M.V. Fischetti, Phys. Rev. B 59, 4901 (1999).
9. See Eqs. (41) and (42) in Ref. 8.
10. 2.
11. The open character of the system results in a non-Hermitian correction ΔL to the Liouville operator L, whose effect is equivalent to a purely dissipative process within the simulated region, as originally pointed out in Ref. 4.
12. 2〉.
13. ββ(r).
14. See, e.g., P. Bertrand et al., Phys. Lett. 94A, 415 (1983), and references therein.