Assessment of high-frequency performance potential of carbon nanotube transistors

IEEE Transactions on Nanotechnology

Volumn 4, Issue 6, 2005, Pages 715-721

  Guo, Jing ^b,e   Hasan, Sayed ^c   Javey, Ali ^d   Bosman, Gijs ^a,b,f   Lundstrom, Mark ^a,c,g,h  

^a IEEE   (United States)

^b University of Florida   (United States)

^c PURDUE UNIVERSITY   (United States)

^d HARVARD UNIVERSITY   (United States)

^e UNIVERSITY OF FLORIDA   (United States)

^f American and Dutch Physical Societies   (United States)

^g Purdue University   (United States)

^h AMERICAN PHYSICAL SOCIETY   (United States)

Author keywords

Carbon nanotubes (CNTs); Field effect transistors (FETs); Radio frequency (RF)

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (CNTFET); RADIO FREQUENCY (RF);

CAPACITANCE; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM DOTS;

CARBON NANOTUBES;

EID: 28444442341     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.858601     Document Type: Article

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