Electron mobility model for strained-Si devices

IEEE Transactions on Electron Devices

Volumn 52, Issue 4, 2005, Pages 527-533

  Dhar, Siddhartha ^a   Kosina, Hans ^a   Palankovski, Vassil ^b   Ungersboeck, Stephan Enzo ^a   Selberherr, Siegfried ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Intervalley scattering; Mobility model; Monte Carlo simulations; SiGe; Strained Si; Technology CAD

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRON MOBILITY; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; STRAIN;

INTERVALLEY SCATTERING; MOBILITY MODEL; SILICON GERMANITE;

SEMICONDUCTOR DEVICES;

EID: 17444414585     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.844788     Document Type: Article

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