Carbon nanotube applications in microelectronics

IEEE Transactions on Components and Packaging Technologies

Volumn 27, Issue 4, 2004, Pages 629-634

  Hoenlein, Wolfgang ^a   Kreupl, Franz ^a   Duesberg, Georg Stefan ^a   Graham, Andrew Peter ^a   Liebau, Maik ^a   Seidel, Robert Viktor ^a   Unger, Eugen ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Carbon nanotube field effect transistors (CNTFETs); Chemical vapor deposition (CVD); Metal oxide semiconductor field effect transistors (MOSFETs)

Indexed keywords

CATALYSTS; CHEMICAL VAPOR DEPOSITION; GROWTH (MATERIALS); MICROELECTRONICS; MOSFET DEVICES; NETWORKS (CIRCUITS); SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNT FETS); SEMICODUCTING SINGLE WALLED TUBES;

CARBON NANOTUBES;

EID: 10244259137     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2004.838876     Document Type: Article

References (24)

1. S. Ijiima, "Helical microtubules of graphitic carbon," Nature, vol. 354, pp. 56-58, 1991.
2. R. H. Baughman, A. A. Zhakidov, and W. A. deHeer, "Carbon nanotubes-the route toward applications," Science, vol. 297, pp. 787-792, 2002.
3. P. G. Collins and P. Avouris, "Nanotubes for electronics," Sci. Amer., vol. 12, pp. 62-69, 2000.
4. J. W. Mintmire and C. T. White, "Universal density of states for carbon nanotubes," Phys. Rev. Lett., vol. 81, no. 12, pp. 2506-2509, 1998.
5. B. Q. Wei, R. Vajtai, and P. M. Ajayan, "Reliability and current carrying capacity of carbon nanotubes," Appl. Phys. Lett., vol. 79, no. 8, pp. 1172-1174, 2001.
6. R. Saito, D. Dresselhaus, and M. S. Dresselhaus, Physical Properties of Carbon Nanotubes. London, U.K.: Imperial College Press, 1998.
7. H. Dai, "Carbon nanotubes: Synthesis, integration, and properties," Acc. Chem. Res., vol. 35, pp. 1035-1044, 2002.
8. W. Steinhoegl, G. Schindler, G. Steinlesberger, and M. Engelhardt, "Size-dependent resistivity of metallic wires in the mesoscopic range," Phys. Rev., vol. B66, pp. 075 414-075 414, 2002.
9. W. Hoenlein, "New prospects for microelectronics: Carbon nanotubes," Jpn. J. Appl. Phys., vol. 41, pp. 4370-4374, 2002.
10. F. Kreupl, A. P. Graham, G. S. Duesberg, W. Steinhoegl, M. Liebau, E. Unger, and W. Hoenlein, "Carbon nanotubes in interconnect applications," Microelectron. Eng., vol. 64, pp. 399-408, 2002.
11. G. S. Duesberg, A. P. Graham, M. Liebau, R. Seidel, E. Unger, F. Kreupl, and W. Hoenlein, "Growth of isolated carbon nanotubes with lithographically defined diameter and location," Nano Lett., vol. 3, pp. 257-259, 2003.
12. M. Engelhardt, G. Schindler, K. Mosig, G. Steinlesberger, W. Steinhoegl, and G. Gebara, "Extending copper metallization technology for wiring to end-of-the-roadmap feature sizes," in Proc. Advanced Metallization Conf., Montreal, QC, Canada, 2001, pp. 11-17.
13. S. J. Tans, A. R. M. Verschueren, and C. Dekker, "Room-temperature transistor based on a single carbon nanotube," Nature, vol. 393, pp. 49-52, 1998.
14. A. Bachthold, P. Hadley, T. Nakanishi, and C. Dekker, "Logic circuits with carbon nanotube transistors," Science, vol. 294, pp. 1317-1320, 2001.
15. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and P. Avouris, "Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes," Appl. Phys. Lett., vol. 80, pp. 3817-3819, 2002.
16. V. Derycke, R. Martel, J. Appenzeller, and P. Avouris, "Carbon nanotube inter- and intramolecular gates," Nano Lett., vol. 9, pp. 453-456, 2001.
17. J. Guo, M. Lundstrom, and S. Datta, "Performance projections for ballistic carbon nanotube field-effect transistors," Appl. Phys. Lett., vol. 80, pp. 3192-3194, 2002.
18. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, "High-K dielectrics for advanced carbon nanotube transistors and logic gates," Nature Mater, vol. 1, pp. 241-246, 2002.
19. "Field effect transistor used in a switching arrangement comprises a gate region between a source region and a drain region," German Patent DE 0 010 036 897 C1, 2000.
20. S. Rosenblatt, Y. Yaish, J. Park, J. Gore, V. Sazonova, and P. L. McEuen, "High performance electrolyte gated carbon nanotube transistors," Nano Lett., vol. 2, pp. 869-872, 2002.
21. T. Ghani, S. Ahmed, P. Aminzadeh, J. Bielefeld, P. Charvat, C. Chu, M. Harper, P. Jacob, C. Jan, J. Kavalieros, C. Kenyon, R. Nagisetty, P. Packan, J. Sbastian, M. Taylor, J. Tsai, S. Tyagi, S. Yang, and M. Bohr, "100 mn gate length high performance/low power CMOS transistor structure," in IEDM Tech. Dig., 1999, pp. 415-419.
22. B. Yu, L. Chang, S. Ahmed, H. Wang, S. Bell, C. Yang, C. Tabery, C. He, Q. Xiang, T. King, J. Bokor, C. Hu, M. Lin, and D. Kyser, "FinFET scaling to 10 nm gate length," in IEDM Tech. Dig., 2002, pp. 251-254.
23. B. Doris, M. Ieong, T. Kanarsky, Y. Zhang, R. A. Roy, O. Dokumaci, Z. Ren, F. Jamin, L. Shi, W. Natzle, H. Huang, J. Mezzapelle, A. Mocuta, S. Womack, M. Gribeliyuk, E. C. Jones, R. Miller, H. P. Wong, and W. Haensch, "Extreme scaling with ultra-thin Si channel MOSFETs," in IEDM Tech. Dig., 2002, pp. 267-270.
24. NASA. (2004) Computational Nanotechnology. Tech. Rep. [Online]. Available: http://www.nas.nasa.gov/Groups/SciTech/nano/images/images. html