Electron mobility model for 〈110〉 stressed silicon including strain-dependent mass

IEEE Transactions on Nanotechnology

Volumn 6, Issue 1, 2007, Pages 97-100

  Dhar, Siddhartha ^a,b   Ungersböck, Enzo ^b   Kosina, Hans ^a,b   Grasser, Tibor ^a,b   Selberherr, Siegfried ^a,b  

^a IEEE   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Effective mass; Low field mobility; Mobility model; Uniaxial stress strain

Indexed keywords

EFFECTIVE MASS; LOW-FIELD MOBILITY; MOBILITY MODEL; UNIAXIAL STRESS/STRAIN;

MATHEMATICAL MODELS; NANOTECHNOLOGY; SILICON; STRAIN;

ELECTRON MOBILITY;

EID: 33846574205     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.888533     Document Type: Article

References (11)

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