Monte Carlo simulation of electron transport in Si: The first 20 years

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 813-820

  Fischetti, M V ^a   Laux, S E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT;

EID: 84920737691     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (35)

1. C. Canali et al., Phys. Rev. B 12, 2265 (1975).
2. J. Y. Tang and K. Hess, J. Appl. Phys. 54, 5139 (1983).
3. M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988).
4. E. O. Kane, Phys. Rev. 159, 624 (1967).
5. Th. Vogelsang and W. Hänsch, J. Appl. Phys. 70, 1493 (1991).
6. R. Thoma et al., J. Appl. Phys. 69, 2300 (1991).
7. J. Bude, K. Hess, and G. J. Iafrate, Phys. Rev. B 45, 10958 (1992).
8. N. Sano and A. Yoshii, Phys. Rev. B 45, 4171 (1992).
9. C. Jacoboni, R. Minder, and G. Majni, J. Phys. Chem. Solids 36, 1129 (1975).
10. R. Brunetti et al., J. Appl. Phys. 52, 6713 (1981).
11. C. Herring and E. Vogt, Phys. Rev. 101, 944 (1956).
12. W. Shockley and J. Bardeen, Phys. Rev. 77, 407 (1950).
13. J. Bardeen and W. Shockley, Phys. Rev. 80, 72 (1950).
14. H. Shichijo, J. Y. Tang, J. Bude, and P. D. Yoder, in Monte Carlo Device Simulation: Full Band and Beyond, K. Hess Ed., (Kluwer Academic Press, Boston, Massachusetts, 1991), p. 285.
15. R. Brunetti et al., Solid State Electron. 32, 1663 (1989).
16. H. Mizuno, K. Taniguchi, and C. Hamaguchi, Semicond. Sei. Technol. 7, B379 (1992).
17. X. Wang, V. Chandramouli, C. Maziar, and A. F. Tasch, Jr., J. Appl. Phys. 73, 3339 (1993).
18. A. Abramo et al., IEEE Trans. Computer-Aided Design 12, 1327 (1993).
19. G. Jin, R. W. Dutton, Y.-J. Park, and H.-S. Min, J. Appl. Phys. 78, 3174 (1995).
20. A. Abramo et al., IEEE Trans. Electron Devices 41, 1646 (1994).
21. M. V. Fischetti and J. M. Higman, in Monte Carlo Device Simulation: Full Band and Beyond, K. Hess Ed., (Kluwer Academic Press, Boston, Massachusetts, 1991), p. 123.
22. T. Kunikiyo et al., J. Appl. Phys. 75, 297 (1994).
23. P. D. Yoder, J. M. Higman, J. Bude, and K. Hess, Semicond. Sei. Technol. 7, B357 (1992).
24. P. D. Yoder, V. D. Natoli, and R. M. Martin, J. Appl. Phys. 73, 4378 (1993).
25. P. D. Yoder and K. Hess, Semicond. Sei. Technol. 9, 852 (1994).
26. E. A. Cartier, M. V. Fischetti, E. A. Eklund, and F. R. McFeely, Appl. Phys. Lett. 62, 3339 (1993).
27. D.J. DiMaria et al., J. Appl. Phys. 57, 1214 (1985).
28. Y. Kamakura et al., J. Appl. Phys. 75, 3500 (1994).
29. N. Sano and A. Yoshii, J. Appl. Phys. 75, 5102 (1994).
30. J. Kolnik, Y. Wang, I. H. Oguzman, and K. F. Brennan, J. Appl. Phys. 76, 3542 (1994).
31. J. Bude and M. Mastrapasqua, IEEE Electron Device Lett. 16, 439 (1995).
32. M. V. Fischetti and S. E. Laux, "Band-structure, deformation potentials, and carrier mobilities in strained Si, Ge, and SiGe alloys", J. Appl. Phys., August 15 (1996).
33. M. V. Fischetti and S. E. Laux, Phys. Rev. B 48, 2244 (1993).
34. M. V. Fischetti, N. Sano, S. E. Laux, and K. Natori, "Full-Band Monte Carlo Simulation of High-Energy Transport and Impact Ionization of Electrons and Holes in Ge, Si, and GaAs" presented at SISPAD'96, Tokyo, Japan, September 2-4, 1996.
35. T. Kunikiyo et al., J. Appl. Phys. 79, 7718 (1996).