Full Quantum Simulation of Silicon-on-Insulator Single-Electron Devices

Journal of Computational Electronics

Volumn 1, Issue 1-2, 2002, Pages 161-164

  Heinz, Frederik Ole ^a   Schenk, Andreas ^a   Scholze, Andreas ^a   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

3D; domain decomposition; quantum dot; single electron transistor; SOI; tunneling

Indexed keywords

DOMAIN DECOMPOSITION METHODS; ELECTRON TUNNELING; GEOMETRY; NANOCRYSTALS; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM DOTS; SILICON ON INSULATOR TECHNOLOGY;

DOMAIN DECOMPOSITIONS; GEOMETRIC CONFINEMENT; PREDICTIVE SIMULATIONS; PROOF OF PRINCIPLES; QUANTITATIVE RESULT; QUANTUM SIMULATIONS; SINGLE-ELECTRON DEVICES; TUNNELING TRANSPORTS;

SINGLE ELECTRON TRANSISTORS;

EID: 21844467696     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020752803154     Document Type: Article

References (4)

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