Revision of the standard hydrodynamic transport model for SOI simulation

IEEE Transactions on Electron Devices

Volumn 49, Issue 10, 2002, Pages 1814-1820

  Gritsch, Markus ^b   Kosina, Hans ^a,b   Grasser, Tibor ^b   Selberherr, Siegfried ^a,b  

^a IEEE

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Device simulation; Hydrodynamic transport model; Numerical analysis; Semiconductor device modeling; SOI MOSFET

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; MOSFET DEVICES; NUMERICAL METHODS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

DRAIN CURRENT; DRIFT DIFFUSION SIMULATION; HYDRODYNAMIC TRANSPORT MODEL; SILICON ON INSULATOR SIMULATION;

SEMICONDUCTOR DEVICE TESTING;

EID: 0036773423     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.803645     Document Type: Article

References (7)

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