A quantum-mechanical treatment of phonon scattering in carbon nanotube transistors

Journal of Applied Physics

Volumn 98, Issue 6, 2005, Pages

  Guo, Jing ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (CNTFET); OPTICAL PHONONS (OP); PHONON SCATTERING; QUANTUM-MECHANICAL TREATMENT;

APPROXIMATION THEORY; CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); GREEN'S FUNCTION; PHONONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM DOTS;

ELECTRON SCATTERING;

EID: 26244456096     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2060942     Document Type: Article

References (28)

1. P. Avouris, J. Appenzeller, R. Martel, and S. J. Wind, Proc. IEEE 0018-9219 10.1109/JPROC.2003.818338 91, 1772 (2003); P. L. McEuen, M. S. Fuhrer, and H. K. Park, IEEE Trans. Nanotechnol. 1, 78 (2002).
2. P. Avouris, J. Appenzeller, R. Martel, and S. J. Wind, Proc. IEEE 0018-9219 10.1109/JPROC.2003.818338 91, 1772 (2003); P. L. McEuen, M. S. Fuhrer, and H. K. Park, IEEE Trans. Nanotechnol. 1, 78 (2002).
3. Z. Yao, C. L. Kane, and C. Dekker, Phys. Rev. Lett. 84, 2941 (2000).
4. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, and H. Dai, Phys. Rev. Lett. 92, 106804 (2004).
5. J. Y. Park, Nano Lett. 4, 517 (2004).
6. A. Javey, J. Guo, Q. Wang, and H. Dai, Nature (London) 0028-0836 10.1038/nature01797 424, 654 (2003); S. J. Wind, J. Appenzeller, and P. Avouris, Phys. Rev. Lett. 91, 058301 (2003).
7. A. Javey, J. Guo, Q. Wang, and H. Dai, Nature (London) 0028-0836 10.1038/nature01797 424, 654 (2003); S. J. Wind, J. Appenzeller, and P. Avouris, Phys. Rev. Lett. 91, 058301 (2003).
8. Y. Taur and T. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, London, UK, 1998).
9. A. Javey, J. Guo, D. B. Farmer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. Dai, Nano Lett. 4, 1319 (2004).
10. R. V. Seidel, Nano Lett. 5, 147 (2005).
11. J. Guo and M. Lundstrom, Appl. Phys. Lett. 86, 193103 (2005).
12. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, UK, 1995).
13. M. Buttiker, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.57.1761 57, 1761 (1986); R. Venugopal, M. Paulsson, S. Goasguen, S. Datta, and H. Lundstrom, J. Appl. Phys. 93, 5613 (2003).
14. M. Buttiker, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.57.1761 57, 1761 (1986); R. Venugopal, M. Paulsson, S. Goasguen, S. Datta, and H. Lundstrom, J. Appl. Phys. 93, 5613 (2003).
15. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris, Phys. Rev. Lett. 0031-9007 10.1103/PHYSREVLETT.88.126801 89, 126801 (2002); S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
16. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris, Phys. Rev. Lett. 0031-9007 10.1103/PHYSREVLETT.88.126801 89, 126801 (2002); S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
17. J. Guo, S. Datta, M. Lundstrom, and M. P. Anantram, Int. J. Multiscale Comp. Eng. 2, 257 (2004).
18. F. Leonard and J. Tersoff, Phys. Rev. Lett. 84, 4693 (2000).
19. S. Ramo, J. R. Whinnery, and T. Van Duzer, Fields and Waves in Communication Electronics, 3rd ed. (Wiley, New York, NY, 1993).
20. V. Perebeinos, J. Tersoff, and P. Avouris, Phys. Rev. Lett. 94, 027402 (2005).
21. G. D. Mahan, Phys. Rev. B 68, 125409 (2003).
22. G. Pennington and N. Goldsman, Phys. Rev. B 68, 045426 (2003).
23. E. Pop, D. Mann, J. Cao, Q. Wang, K. Goodson, and H. Dai, e-print cond-mat/0506122.
24. A. Svizhenko and M. P. Anantram, IEEE Trans. Electron Devices 50, 1459 (2003).
25. W. J. Liang, M. Bockrath, D. Bozovic, J. H. Hafner, M. Tinkham, and H. Park, Nature (London) 411, 665 (2001).
26. J. Guo, S. Datta, and M. Lundstrom, IEEE Trans. Electron Devices 51, 172 (2004).
27. J. Chen, C. Klinke, A. Afzali, and Ph. Avouris, Appl. Phys. Lett. 86, 123108 (2005).
28. M. Lundstrom and Z. B. Ren, IEEE Trans. Electron Devices 49, 133 (2002).