Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 6019-6027

  Gehring, A ^a   Grasser, T ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; DRAIN BIAS; ELECTRON ENERGY DISTRIBUTION FUNCTIONS; GATE CURRENT; GATE LENGTH; GATE OXIDE TUNNELING CURRENTS; MAXWELLIAN DISTRIBUTION; MONTE CARLO DATA; OXIDE THICKNESS; SHORT-CHANNEL DEVICES; TRANSPORT MODELS; TUNNELING CURRENT;

ELECTRON TUNNELING;

ELECTRON ENERGY ANALYZERS;

EID: 0037113088     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516617     Document Type: Article

References (22)

1. S. Keeney et al., IEEE Trans. Electron Devices 39, 2750 (1992). etd IETDAI 0018-9383
2. K. F. Schuegraf and C. Hu, IEEE Trans. Electron Devices 41, 761 (1994). etd IETDAI 0018-9383
3. K. Hasnat et al., IEEE Trans. Electron Devices 44, 129 (1997). etd IETDAI 0018-9383
4. J. Cai and C.-T. Sah, J. Appl. Phys. 89, 2272 (2001). jap JAPIAU 0021-8979
5. R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973). apl APPLAB 0003-6951
6. K. Gundlach, Solid-State Electron. 9, 949 (1966). sel SSELA5 0038-1101
7. A. Gehring, T. Grasser, S. Selberherr, in International Semiconductor Device Research Symposium (Washington, DC, 2001), pp. 260-263.
8. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr, J. Appl. Phys. 91, 3869 (2002). jap JAPIAU 0021-8979
9. C. Fiegna et al., IEEE Trans. Electron Devices 38, 603 (1991). etd IETDAI 0018-9383
10. R. Shankar, Principles of Quantum Mechanics (Plenum, New York, 1994).
11. E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957). jpx JPCSAW 0022-3697
12. W. Franz, in Handbuch der Physik (Springer, Berlin, 1956), Vol. XVII, p. 155.
13. A. Abramo and C. Fiegna, J. Appl. Phys. 80, 889 (1996). jap JAPIAU 0021-8979
14. D. Cassi and B. Ricco, IEEE Trans. Electron Devices 37, 1514 (1990). etd IETDAI 0018-9383
15. K.-I. Sonoda, M. Yamaji, K. Taniguchi, C. Hamaguchi, J. Appl. Phys. 80, 5444 (1996). jap JAPIAU 0021-8979
16. T. Grasser, H. Kosina, S. Selberherr, J. Appl. Phys. 90, 6165 (2001). jap JAPIAU 0021-8979
17. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr, J. Appl. Phys. 90, 2389 (2001). jap JAPIAU 0021-8979
18. A. Gehring, T. Grasser, S. Selberherr, in Modeling and Simulation of Microsystems, San Juan, PR, 2002 (Computational Publications, Cambridge, MA, 2002), pp. 560-563.
19. P. Cappelleti, Flash Memories (Kluwer Academic, Dordrecht, 2000).
20. J. P. Shiely, Ph.D. dissertation, Duke University, 1999.
21. 2 and High-K Materials for ULSI Gate Dielectrics, San Francisco, CA, 1999 (Materials Research Society, Warrendale, PA, 1999), pp. 227-239.
22. S. Schwantes and W. Krautschneider, in European Solid-State Device Research Conference, Nuremberg, Germany, 2001 (Editions Frontieres, Paris, France, 2001), pp. 471-474.