Monte Carlo Simulations of Double-Gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2467-2473

  Kathawala, Gulzar A ^a   Winstead, Brian ^a   Ravaioli, Umberto ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Double gate MOSFET; Interface scattering; Monte Carlo simulation; Volume inversion

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; GREEN'S FUNCTION; INTEGRAL EQUATIONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTOR DOPING;

INTERFACE SCATTERING; PHONON SCATTERING;

MOSFET DEVICES;

EID: 0346707542     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819699     Document Type: Article

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