Full band modeling of the excess current in a delta-doped silicon tunnel diode

Journal of Applied Physics

Volumn 94, Issue 8, 2003, Pages 5005-5013

  Rivas, Cristian ^a,b   Lake, Roger ^a   Frensley, William R ^b   Klimeck, Gerhard ^c   Thompson, Phillip E ^d   Hobart, Karl D ^d   Rommel, Sean L ^e   Berger, Paul R ^f,g  

^a University of California Riverside   (United States)

^b The University of Texas at Dallas   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

^e ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^f The Ohio State University   (United States)

^g OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; BORON; ELECTRIC CURRENTS; ERROR ANALYSIS; GREEN'S FUNCTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CURRENT TUNNELING;

TUNNEL DIODES;

EID: 0242367224     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1606114     Document Type: Article

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