Effective boundary conditions for carriers in ultrathin SOI channels

IEEE Transactions on Nanotechnology

Volumn 2, Issue 1, 2003, Pages 59-63

  Sverdlov, Viktor A ^a   Oriols, Xavier ^b   Likharev, Konstantin K ^a  

^a STONY BROOK UNIVERSITY   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Backscattering; Ballistic transfer; Boltzmann equation; Double gate transistors; Monte Carlo simulation; MOSFET; Nanoelectronics

Indexed keywords

BACKSCATTERING; COMPUTER SIMULATION; HOT CARRIERS; MONTE CARLO METHODS; MOSFET DEVICES; NANOTECHNOLOGY; ULTRATHIN FILMS;

BALLISTIC TRANSFER; BOLTZMANN EQUATION; DOUBLE GATE TRANSISTORS; NANOELECTRONICS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0042038661     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.808502     Document Type: Article

References (9)

1. K. Likharev, "Sub-20-nm electron devices," in Advanced Semiconductor and Organic Nona-Technique, H. Morkoç, Ed. New York: Academic, 2002, pt. 1, see references therein.
2. P. M. Solomon, "On contacts to small semiconductor devices," unpublished manuscript, 1998.
3. N. W. Ashcroft and N. D. Mermin, Solid State Physics. Fort Worth, TX: Saunders College Publ., 1976, ch. 16.
4. M. C. W. van Rossum and Th. M. Nieuwenhuizen, "Multiple scattering of classical waves: Microscopy, mesoscopy, and diffusion," Rev. Mod. Phys., vol. 71, pp. 313-371, Jan. 1999.
5. C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Mod. Phys., vol. 55, pp. 645-700, July 1983.
6. M. V. Fischetti, "Effect of the electron-plasmon interaction on the electron mobility in silicon," Phys. Rev. B, vol. 44, pp. 5527-5534, Sept. 1991.
7. P. J. Price, "Two-dimensional electron transport in semiconductors layers. Phonon scattering," Ann. Phys., vol. 133, pp. 217-239, Feb. 1981.
8. M. Shoji and S. Horiguchi, "Electronic structures and phononlimited electron mobility of double-gate silicon-on-insulator Si inversion layers," J. Appl. Phys., vol. 85, pp. 2722-2731, Mar. 1999.
9. S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge, U.K.: Cambridge Univ. Press, 1995.