An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

Solid-State Electronics

Volumn 49, Issue 5, 2005, Pages 727-732

  Palestri, P ^a   Eminente, S ^b,c   Esseni, D ^a   Fiegna, C ^c,d   Sangiorgi, E ^c,d   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b UNIVERSITY OF FERRARA   (Italy)

^c ARCES Center   (Italy)

^d DEIS   (Italy)

Author keywords

Mobility models; Monte Carlo method; MOSFETs; Nano scale; Silicon on insulator (SOI)

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; DIFFUSION; ELECTRON GAS; ELECTROSTATICS; GATES (TRANSISTOR); INTEGRAL EQUATIONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS;

CARRIER QUANTIZATION; FREE ELECTRON GAS; MOBILITY MODELS; MONTE-CARLO METHOD; NANO-SCALE SIMULATIONS;

MOSFET DEVICES;

EID: 14844303532     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.11.024     Document Type: Conference Paper

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