Electron effective mobility in strained-Si/Si1-xGex MOS devices using Monte Carlo simulation

Solid-State Electronics

Volumn 49, Issue 8, 2005, Pages 1320-1329

  Aubry Fortuna, V ^a   Dollfus, P ^a   Galdin Retailleau, S ^a  

^a CNRS   (France)

Author keywords

Effective mobility; Monte Carlo simulation; MOSFET; Strained Si

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

EFFECTIVE MOBILITY; INTERFACE ROUGHNESS; SCATTERING MECHANISMS; STRAINED-SI;

MOS DEVICES;

EID: 24144473916     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.06.013     Document Type: Article

References (52)

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