Modeling and simulation of narrowband gap semiconductor indium antimonide (InSb) based MOSFET

2005 International Semiconductor Device Research Symposium

Volumn 2005, Issue , 2005, Pages 338-339

  Ma, L ^a   Jin, Y W ^a   Zeng, C ^a   Barlage, D W ^a  

^a North Carolina State University   (United States)

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[No Author keywords available]

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EID: 33847191730     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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