A Consistent Nonisothermal Extension of the Scharfetter-Gummel Stable Difference Approximation

IEEE Electron Device Letters

Volumn 6, Issue 9, 1985, Pages 446-447

  Mcandrew, C C ^a   Singhal, K ^a   Heasell, E L ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION - MATHEMATICAL MODELS; MATHEMATICAL TECHNIQUES - APPROXIMATION THEORY; SEMICONDUCTING GALLIUM ARSENIDE - TRANSPORT PROPERTIES;

CARRIER TEMPERATURE AS CRUCIAL PARAMETER; CONSISTENT NONISOTHERMAL EXTENSION; SCHARFETTER-GUMMEL (SG) APPROXIMATION;

SEMICONDUCTOR DEVICES;

EID: 0022120123     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26187     Document Type: Article

References (4)

1. D. L. Scharfetter and H. K. Gummel, “Large signal analysis of a silicon read diode oscillator,” IEEE Trans. Electron Devices, vol. ED-16, pp. 64–77, Jan. 1969.
2. R. K. Cook and J. Frey, “Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-29, pp. 970–977, Jun. 1982.
3. V. C. Alwin, D. H. Navon, and L. J. Turgeon, “Time-dependent carrier flow in a transistor structure under nonisothermal conditions,” IEEE Trans. Electron Devices, vol. ED-24, pp. 1297–-1304 Nov. 1977.
4. A. Chryssafis and W. Love, “A computer-aided analysis of one-dimensional thermal transients in n-p-n power transistors,” Solid-State Electron., vol. 22, no. 3, pp. 249–256, Mar. 1979.