Nanoscale SOI MOSFETs: A comparison of two options

Solid-State Electronics

Volumn 48, Issue 6, 2004, Pages 857-865

  Walls, Thomas J ^a   Sverdlov, Victor A ^a   Likharev, Konstantin K ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

Double gate; MOSFET; Parameter sensitivity; Power; SOI; Ultra thin channel

Indexed keywords

CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRODES; ELECTRON TUNNELING; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY;

DOUBLE GATES; PARAMETER SENSITIVITY; ULTRA-THIN CHANNELS;

MOSFET DEVICES;

EID: 1442360787     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.024     Document Type: Article

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