Quantum corrections in the simulation of decanano MOSFETs

Solid-State Electronics

Volumn 47, Issue 7 SPEC., 2003, Pages 1141-1145

  Asenov, A ^a   Brown, A R ^a   Watling, J R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CARRIER CONCENTRATION; COMPUTATIONAL METHODS; ELECTRON TUNNELING; QUANTUM ELECTRONICS; QUANTUM THEORY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DENSITY GRADIENT APPROACH; QUANTUM CORRECTIONS;

MOSFET DEVICES;

EID: 0038417916     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00030-3     Document Type: Conference Paper

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