Density-gradient analysis of tunneling in MOS structures with ultra-thin oxides

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1999, Pages 235-238

  Ancona, M G ^a   Yu, Z ^a   Dutton, R W ^a   Vande Voorde, P J ^a   Cao, M ^a   Vook, D ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRON TUNNELING; GATES (TRANSISTOR); QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

DENSITY-GRADIENT (DG) THEORY;

MOS DEVICES;

EID: 0033283408     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)