Improving DC and AC characteristics of ohmic contact carbon nanotube field effect transistors

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 541-544

  Pourfath, M ^a   Kosina, H ^a   Cheong, B H ^b   Park, W J ^b   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; COMPUTER SIMULATION; ELECTRIC INSULATORS; OHMIC CONTACTS;

AC CHARACTERISTICS; DC CHARACTERISTICS; GATE DRAIN SPACERS;

FIELD EFFECT TRANSISTORS;

EID: 33750844468     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546704     Document Type: Conference Paper

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