Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors

Physical Review Letters

Volumn 92, Issue 4, 2004, Pages 483011-483014

  Appenzeller, J ^a   Radosavljevic M ^a   Knoch, J ^b   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CARBON NANOTUBES; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRODES; ELECTRON TUNNELING; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; THERMIONIC EMISSION; TRANSISTORS;

CHARGE INJECTION; NANOTRANSISTORS; SCHOTTKY BARRIERS;

SEMICONDUCTOR MATERIALS;

EID: 1442307031     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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12. To highlight the universal applicability of our approach different barrier heights are simulated.
13. d on 1/T.
14. d(T) values.
15. gs.
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19. gs = +260 meV.