Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2063-2067

  Nakamura, Tomonori ^a   Satoh, Masataka ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

n type 6H SiC; NiSi2; Ohmic contact

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC RESISTANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

CONTACT RESISTANCE;

OHMIC CONTACTS;

EID: 0036890468     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00181-8     Document Type: Article

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