Low resistance ohmic contacts to n-SiC using niobium

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Oder, T N ^a   Williams, John R ^a   Bryant, K W ^a   Bozack, M J ^a   Crofton, J ^b  

^a AUBURN UNIVERSITY   (United States)

^b MURRAY STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; INTERDIFFUSION (SOLIDS); METALLIC FILMS; NIOBIUM; NIOBIUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE;

LINEAR TRANSMISSION LINE METHOD (LTLM); NIOBIUM CARBIDE;

OHMIC CONTACTS;

EID: 18844471773     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

1. J. Crofton, L.M. Porter and J.R. Williams, in Silicon Carbide: A Review of Fundamental Questions and Applications to Current Device Technology - Vol. I, eds. W.J. Choyke, H. Matsunami and G. Pensl, (Akademie Verlag) (1997), p. 581.
2. J. Crofton, P.G. McMullin, J.W. Williams and M.J. Bozack, J. Appl Phys. 77(3) (1995), p. 1317.
3. T.N. Oder, J.R. Williams, S.E. Mohney and J. Crofton, J. Electron. Mater. 27(1) (1998), p. 12.
4. J. B. Casady, E. D. Luckowski, M. J. Bozack, D. Sheridan, R. W. Johnson, and J. R. Willliams, in Silicon Carbide and Related Materials 1995 (IOP Publishing, Ltd) (1996), p. 625.
5. L. Ramqvist, K. Hamrin, G. Johansson, U. Gelius and C. Nordling, J. Phys. Chem. Solids 31 (1970), p. 2669.
6. J. Feng, M. Naka and C. Schuster, Trans. JWRI 23(2) (1994), p. 191.
7. A. Joshi, H.S Hu, L Jesion, J.J. Stephens and J. Wadsworth, Metallurgical Transactions, 21A (1990), p. 2829.