메뉴 건너뛰기




Volumn 47, Issue 9, 2003, Pages 1437-1441

The effect of titanium on Al-Ti contacts to p-type 4H-SiC

Author keywords

4H; AFM; Aluminum; Contacts; SEM; SiC; Silicon carbide; Titanium

Indexed keywords

ALUMINUM; ANNEALING; ATOMIC FORCE MICROSCOPY; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

EID: 0038070263     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00097-2     Document Type: Article
Times cited : (35)

References (14)
  • 1
    • 0031100073 scopus 로고    scopus 로고
    • Fundamentals of SiC-based device processing
    • Melloch M., Cooper J. Fundamentals of SiC-based device processing. MRS Bull. 1997;42-47.
    • (1997) MRS Bull. , pp. 42-47
    • Melloch, M.1    Cooper, J.2
  • 3
    • 18844483162 scopus 로고    scopus 로고
    • Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC
    • Luo Y., Tan F., Tone K., Zhao J., Crofton J. Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC. Silicon carbide and related materials 1999. vol. 338-342:2000;1013-1016.
    • (2000) Silicon Carbide and Related Materials 1999 , vol.338-342 , pp. 1013-1016
    • Luo, Y.1    Tan, F.2    Tone, K.3    Zhao, J.4    Crofton, J.5
  • 8
    • 0000858806 scopus 로고    scopus 로고
    • Aluminum doped 6H SiC: CVD growth and formation of ohmic contacts
    • Silicon Carbide and Related Materials 1995
    • Nordell N., Savage S., Schöner A. Aluminum doped 6H SiC: CVD growth and formation of ohmic contacts. Silicon carbide and related materials 1995. Inst. Phys. Conf. Ser. vol. 142:1996;573-576.
    • (1996) Inst. Phys. Conf. Ser. , vol.142 , pp. 573-576
    • Nordell, N.1    Savage, S.2    Schöner, A.3
  • 9
    • 0033229475 scopus 로고    scopus 로고
    • Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers
    • Vasilevskiǐ K., Rendakova S., Nikitina I., Babanin A., Andreev A. Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers. Semiconductors. 33:1999;1206-1211.
    • (1999) Semiconductors , vol.33 , pp. 1206-1211
    • Vasilevskiǐ, K.1    Rendakova, S.2    Nikitina, I.3    Babanin, A.4    Andreev, A.5
  • 10
    • 0039172744 scopus 로고    scopus 로고
    • Study of annealing conditions on the formation of ohmic contacts on p+ 4H-SiC layers grown by CVD and LPE
    • Vassilevski K., Constantinidis G., Papanicolaou N., Martin N., Zekentes K. Study of annealing conditions on the formation of ohmic contacts on p+ 4H-SiC layers grown by CVD and LPE. Mater Sci Eng B. 61-62:1999;296-300.
    • (1999) Mater. Sci. Eng. B , vol.61-62 , pp. 296-300
    • Vassilevski, K.1    Constantinidis, G.2    Papanicolaou, N.3    Martin, N.4    Zekentes, K.5
  • 13
    • 0030288360 scopus 로고    scopus 로고
    • Thermally stable low ohmic contacts to p-type 6H-SiC using cobalt silicides
    • Lundberg N., Östling M. Thermally stable low ohmic contacts to p-type 6H-SiC using cobalt silicides. Solid State Electron. 39(11):1996;1559-1565.
    • (1996) Solid State Electron. , vol.39 , Issue.11 , pp. 1559-1565
    • Lundberg, N.1    Östling, M.2
  • 14
    • 0020129227 scopus 로고
    • Obtaining the specific contact resistance from transmission line model measurements
    • Reeves G., Harrison H. Obtaining the specific contact resistance from transmission line model measurements. IEEE Electron Dev Lett. 3(5):1982;111-113.
    • (1982) IEEE Electron. Dev. Lett. , vol.3 , Issue.5 , pp. 111-113
    • Reeves, G.1    Harrison, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.