Improved ohmic contact to the n-type 4H-SiC semiconductor using cobalt silicides

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 306-310

  Cho, Nam Ihn ^a   Jung, Kyung Hwa ^a   Choi, Yong ^a  

^a SunMoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT SILICIDE; CONTACT RESISTANCE; ELECTRON BEAM EVAPORATION; METAL FILM THICKNESS; MULTILAYER STRUCTURE;

ANNEALING; COBALT COMPOUNDS; ELECTRIC RESISTANCE; ELECTRON BEAMS; EVAPORATION; MORPHOLOGY; OHMIC CONTACTS; OXIDATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SUBSTRATES; THERMODYNAMIC STABILITY;

SILICON CARBIDE;

EID: 1642343744     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/003     Document Type: Article

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