Recent advances in SiC power devices

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 895-900

  Cooper Jr , J A ^a   Melloch, M R ^a   Woodall, J M ^a   Spitz, J ^a   Schoen, K J ^a   Henning, J P ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

DMOS Transistors; GTO's; JBS Rectifiers; LDMOS Transistors; Pinch Rectifiers; Schottky Rectifiers; Thyristors; UMOS Transistors

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SOLID STATE RECTIFIERS; THERMAL CONDUCTIVITY OF SOLIDS; THERMODYNAMIC STABILITY; THYRISTORS;

POWER DEVICES;

MOS DEVICES;

EID: 11644267400     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.895     Document Type: Article

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