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Volumn 457-460, Issue II, 2004, Pages 873-876

Study of TiW /Au thin films as metallization stack for high temperature and harsh environment devices on 6H Silicon Carbide

(5) Baeri, A a Raineri, V a Roccaforte, F a La Via, F b Zanetti, E a,b

a CNR (Italy)

b STMICROELECTRONICS (Italy)

Author keywords

Harsh environment; High temperature; Metallization; SiC

Indexed keywords

CHEMICAL RESISTANCE; ELECTRIC LINES; LITHOGRAPHY; MATHEMATICAL MODELS; METALLIZING; MULTILAYERS; SILICON CARBIDE; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

HARSH ENVIRONMENT; HIGH TEMPERATURE; SIC;

THIN FILMS;

EID: 8644266774 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.873 Document Type: Conference Paper

Times cited : (7)

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