High-quality Schottky and ohmic contacts in planar 4H-SiC metal semiconductor field-effect transistors and device performance

Journal of Electronic Materials

Volumn 33, Issue 2, 2004, Pages 89-93

  Na, Hoonjoo ^a,c,d   Kim, HyeongJoon ^d   Adachi, Kazuhiro ^a,c   Kiritani, Norihiko ^b,c   Tanimoto, Satoshi ^b,c   Okushi, Hideyo ^a,c   Arai, Kazuo ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Advanced Power Device Laboratory   (Japan)

^c ULLPDTRB   (Japan)

^d Seoul National University   (South Korea)

Author keywords

Ion implantation; MESFET; Ohmic contact; Schottky contact; SiC

Indexed keywords

DOPING (ADDITIVES); INTERFACES (MATERIALS); ION IMPLANTATION; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; TRANSCONDUCTANCE;

DOPING CONCENTRATION; SCHOTTKY CONTACT;

MESFET DEVICES;

EID: 1542378788     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0275-7     Document Type: Article

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