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Volumn 457-460, Issue II, 2004, Pages 861-864
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Schottky-ohmic transition in nickel silicide/SiC-4H system: The effect of non uniform Schottky barrier
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Author keywords
Electrical characterization; Nickel silicide; Ohmic contact; Schottky
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Indexed keywords
ELECTRON ENERGY LEVELS;
INTERFACES (MATERIALS);
MICROSTRUCTURE;
NICKEL COMPOUNDS;
SCHOTTKY BARRIER DIODES;
SECONDARY ION MASS SPECTROMETRY;
SILICON CARBIDE;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
X RAY PHOTOELECTRON SPECTROSCOPY;
ELECTRICAL CHARACTERIZATION;
NICKEL SILICIDE;
SCHOTTKY;
SCHOTTKY BARRIERS;
OHMIC CONTACTS;
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EID: 8744285735
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.861 Document Type: Conference Paper |
Times cited : (10)
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References (11)
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