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Volumn 457-460, Issue II, 2004, Pages 861-864

Schottky-ohmic transition in nickel silicide/SiC-4H system: The effect of non uniform Schottky barrier

Author keywords

Electrical characterization; Nickel silicide; Ohmic contact; Schottky

Indexed keywords

ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); MICROSTRUCTURE; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 8744285735     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.861     Document Type: Conference Paper
Times cited : (10)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.