Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Luo, Yanbin ^a   Yan Feng, ^a   Tone, Kiyoshi ^a   Zhao, Jian H ^a   Crofton, John ^b  

^a RUTGERS UNIVERSITY   (United States)

^b MURRAY STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC RESISTANCE; ION IMPLANTATION; OXIDATION RESISTANCE; PALLADIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; TITANIUM;

CONTACT RESISTANCE;

OHMIC CONTACTS;

EID: 18844483162     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)

1. L. Kassamakova, et al., IEEE Trans. Electron Devices, ED-46, No. 3 (1999), p.605.
2. K. Tone and J. H. Zhao, IEEE Trans. Electron Devices, ED-46, No. 3(1999), p.612.
3. N.A. Papanicolaou, et al., Appl. Phys. Lett., Vol.73, No. 14(1998), p.2009.