Characterization of sputtered titanium silicide ohmic contacts on n-type 6H-silicon carbide

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 270-274

  Getto, R ^a,b   Freytag, J ^a   Kopnarski, M ^b   Oechsner, H ^b  

^a DAIMLER AG   (Germany)

^b Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

FEM simulation; Metallization; Ohmic contacts; Silicon carbide; Titanium silicide; Transmission line model

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ERROR ANALYSIS; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TITANIUM COMPOUNDS; TRANSMISSION LINE THEORY;

TITANIUM SILICIDE;

SILICON CARBIDE;

EID: 0032669042     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00516-9     Document Type: Article

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