NiSi2 ohmic contact to n-type 4H-SiC

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 889-892

  Nakamura, Tomonori ^a   Satoh, Masataka ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

NiSi2; Ohmic contacts; Specific contact resistance

Indexed keywords

CONTACT RESISTANCE; ELECTRIC CONTACTORS; OHMIC CONTACTS; SUBSTRATES; ANNEALING; CARRIER CONCENTRATION; MOSFET DEVICES; NICKEL COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

4H-SIC SUBSTRATE; DEPOSITED FILMS; NISI2; SI FILMS; SPECIFIC CONTACT RESISTANCES; STRUCTURAL AND ELECTRICAL PROPERTIES; CONTACT RESISTANCE;

SILICON CARBIDE;

EID: 0036435308     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.889     Document Type: Conference Paper

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