Thermostable ohmic contacts on p-type SiC

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 787-790

  Kassamakova, L ^a   Kakanakov, R ^a   Nordell, N ^b   Savage, S ^b  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b ACREO AB   (Sweden)

Author keywords

Low Temperature; Ohmic Contact; p Type; Thermal Stability

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON BEAMS; METAL INSULATOR BOUNDARIES; PALLADIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SPUTTER DEPOSITION; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

ELECTRON BEAM EVAPORATION;

OHMIC CONTACTS;

EID: 11644267402     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.787     Document Type: Article

References (4)

1. J. Crofton, P.G. McMullin, J.R. Williams and M.J. Bozack, J.Appl.Physics, 77, 3, (1995), p.1317.
2. H. Höchst, D.W. Niles, G.W. Zajac, T.H. Fleisch, B.C. Johnson and J.M. Meese, J. Vac. Sci. Techn. B 6, No.4, (1988), p.1320.
3. J.S. Shor, R.A. Weber, L.G. Provost, D. Goldstein and A.D. Kurtz, Mat.Res.Soc.Pros., 242, (1992), p.573.
4. Ts. Marinova, A. Kakanakova-Georgieva, V. Krastev, R. Kakanakov, M. Neshev, L. Kassamakova, O. Noblanc, C. Arnodo, S. Cassette and C. Brilinski, MRS Spring Meeting, Strasburg, (1996), A-2.