Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 669-672

  Kiritani, Norihiko ^a,b   Hoshi, Masakatsu ^a   Tanimoto, Satoshi ^a   Adachi, Kazuhiro ^a   Nishizawa, Shin ichi ^a   Yatsuo, Tsutomu ^a   Okushi, Hideyo ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Nissan Research Center   (Japan)

Author keywords

4H SiC; Contact; Contact Resistance; MOSFET

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; HIGH TEMPERATURE EFFECTS; MORPHOLOGY; OHMIC CONTACTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SILICON CARBIDE;

SINGLE CONTACTS;

MOSFET DEVICES;

EID: 0242496522     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.669     Document Type: Conference Paper

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