Nickel ohmic contacts to p- and n-type 4H-SiC

Electronics Letters

Volumn 37, Issue 17, 2001, Pages 1092-1093

  Fursin, L G ^a   Zhao, J H ^a   Weiner, M ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; NICKEL; SEMICONDUCTOR DOPING; SILICON CARBIDE;

CONTACT RESISTANCES; NICKEL OHMIC CONTACTS; TRANSFER LENGTH METHOD;

OHMIC CONTACTS;

EID: 0035899203     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010738     Document Type: Article

References (2)

1. High-temperature ohmic contact to n-type 6H-SiC using nickel
2. Reduction of ohmic contact resistance on n-type 6H-SiC by heavy doping