Ohmic contact structure and fabrication process applicable to practical SiC devices

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 879-884

  Tanimoto, Satoshi ^a,c   Kiritani, Norihiko ^a,c   Hoshi, Masakatsu ^a,c   Okushi, Hedeyo ^b,c  

^a R&D Association for Future Electron Devices   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Ultra Low Loss Power Device Technology Research Body UPR   (Japan)

Author keywords

4H SiC; A SiC; Contact; Contact annealing; Contact resistance

Indexed keywords

CONTACT RESISTANCE; CONTACTS (FLUID MECHANICS); FABRICATION; OHMIC CONTACTS; TITANIUM OXIDES; ION IMPLANTATION; RAPID THERMAL ANNEALING; SILICON CARBIDE;

4H-SIC; 4H-SIC SUBSTRATE; CONTACT MATERIAL; CONTACT STRUCTURE; CONVENTIONAL TECHNIQUES; FABRICATION PROCESS; FIELD OXIDES; SPECIFIC CONTACT RESISTANCES;

SILICON CARBIDE; SEMICONDUCTOR DEVICES;

EID: 18844473170     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.879     Document Type: Conference Paper

References (8)

1. J. Crofton, P.G. McMullin, J.R. William and MJ. Bozack, J. Appl. Phys., 77 (1995), p. 1317.
2. Ts Marinova, A. Kakanakova-Georgieva, V. Lrastev, R. Kakanakov, N. Neshev, L. Kassamakova, O. Noblanc, C. Aenodo, S. Cassette, C. Brylinski, B. Pecz, G. Radnoczi and Gy Vinze, Mater. Sci. Eng., B46 (1997), p. 223.
3. T. Uemoto, Jpn. J. Appl. Phys., 34 (1995), p. L7.
4. K.V. Vassilevski, G. Constatinidis, N. Papanicolaou, N. Martin, K. Zekentes, Mater. Sci. Eng., B61 (1999), p. 296.
5. J. Crofton, P.A. Bames, J.R. Williams and J.A. Edmond. Appl. Phys. Lett., 62 (1993), p. 384.
6. J. Crofton, L.M. Porter and J.R. Williams, Phys. Stat. Sol.. 202 (1997), p. 581.
7. H. Onose, T. Yatsuo, A. Watanabe, T. Yokota, T. Ishikawa, I. Sanpei, T. Someya and Y. Kobayashi, Extended Abstracts of Symposium on Future Electron Devises 2000 (Research and Development Association for Future Electron Devices, Tokyo), FED-172 (2000), p. 142.
8. A. Suzuki, Y. Fujii, H. Saito, Y. Tajima, K. Furukawa and S. Nakajima, J. Cryst. Growth, 115(1991), p. 623.