Evaluation of ohmic contacts to P-type 6H-SiC created by C and Al coimplantation

IEEE Electron Device Letters

Volumn 18, Issue 8, 1997, Pages 375-377

  Zhao, Jian H ^a,b   Tone, Kiyoshi ^a,b   Weiner, Stephen R ^b   Caleca, Maria A ^c   Du, Honghua ^c   Withrow, Stephen P ^d  

^a IEEE   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c STEVENS INSTITUTE OF TECHNOLOGY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANODES; CARBON; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; ION IMPLANTATION; SILICON CARBIDE; THYRISTORS;

SHEET RESISTIVITY;

OHMIC CONTACTS;

EID: 0031213451     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.605444     Document Type: Review

References (13)

1. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, "Large-band-gap SiC, III-V nitride, and H-IV ZnSe-based semiconductor device technologies," J. Appl. Phys., vol. 76, p. 1363, 1994.
2. P. G. Neudeck, "Progress in silicon carbide semiconductor electronics technology," J. Electron. Mater., vol. 24, p. 283, 1995.
3. M. Ghezzo, D. M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D. L. Polla, and H. Bakhru, "Nitrogen-implanted SiC diodes using high-temperature implantation," IEEE Electron Device Lett., vol. 13, p. 639, 1992.
4. S. Yaguchi, T. Kimoto, N. Ohyama, and H. Matsunami, "Nitrogen ion implantation into 6H-SiC and application to high-temperature, radiation-hard diodes," Jpn. J. Appl. Phys., vol. 34, pt. 1, p. 3036, 1995.
5. J. Gardner, M. V. Rao, O. W. Holland, G. Keiner, D. S. Simons, P. H. Chi, J. M. Andrews, J. Kretchmer, and M. Ghezzo, "Elevated temperature nitrogen implants in 6H-SiC," J. Electron. Mater., vol. 25, p. 885, 1996.
6. V. A. Gudkov, G. A. Krysov, and V. V. Makarov, "Investigation of the influence of the conditions during ion implantation and annealing of silicon carbide on the crystal structure and resistance of p-type layers," Sov. Phys. Semicond., vol. 18, p. 684, 1984.
7. _, "Influence of surface dissociation on the properties of ion-implanted p-type layers in silicon carbide," Sov. Phys. Semicond., vol. 20, p. 105, 1986.
8. M. V. Rao, P. Griffiths, O. W. Holland, G. Keiner, J. A. Freitas, Jr., D. S. Simons, P. H. Chi, and M. Ghezzo, "Al and B ion-implantations in 6H- and 3C-SiC," J. Appl. Phys., vol. 77, p. 2479, 1995.
9. M. V. Rao, P. Griffiths, J. Gardner, O. W. Holland, M. Ghezzo, J. Kretchmer, G. Keiner, and J. A. Freitas, Jr., "Al, Al/C, and Al/Si implantations in 6H-SiC," J. Electron. Mater., vol. 25, p. 75, 1996.
10. T. Kimoto, A. Itoh, H. Matsunami, T. Nakata, and M. Watanabe, "Aluminum and boron ion implantations into 6H-SiC epilayers," J. Electron. Mater., vol. 25, p. 879, 1996.
11. J. Schneider and K. Maier, "Point defects in silicon carbide," Physica B, vol. 185, p. 199, 1993.
12. H. Murrmann and D. Widmann, "Current crowding on metal contacts to planar devices," IEEE Trans. Electron Devices, vol. ED-16, p. 1022, 1969.
13. J. Crofton, P. A. Barnes, J. R. Williams, and J. A. Edmond, "Contact resistance measurements on p-type 6H-SiC," Appl. Phys. Lett., vol. 62, p. 384, 1993.