Schottky-ohmic transition in nickel silicide/SiC-4H system: Is it really a solved problem?

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 519-523

  La Via, F ^a   Roccaforte, F ^a   Raineri, V ^a   Mauceri, M ^b   Ruggiero, A ^c   Musumeci, P ^c   Calcagno, L ^c   Castaldini, A ^d   Cavallini, A ^d  

^a CNR IMM   (Italy)

^b Epitaxial Technology Center   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

^d UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Contact resistance; Ni2Si; Schottky; SiC

Indexed keywords

AGGLOMERATION; ANNEALING; GRAPHITE; INTERFACES (MATERIALS); MICROSTRUCTURE; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SPECTROSCOPIC ANALYSIS;

CONTACT RESISTANCE;

SILICON CARBIDE;

EID: 0142023102     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00464-7     Document Type: Conference Paper

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