SiC power devices for high voltage applications

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 330-338

  Rottner, K ^a   Frischholz, M ^a   Myrtveit, T ^a   Mou, D ^a   Nordgren, K ^a   Henry, A ^b   Hallin, C ^b   Gustafsson, U ^c   Schoner A ^c  

^a ABB CORPORATE RESEARCH   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

Converter; High voltage devices; Junction barrier Schottky; PIN diode; Power devices; Switching losses

Indexed keywords

HIGH-VOLTAGE DEVICES;

FAILURE ANALYSIS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

SILICON CARBIDE;

EID: 0032642674     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00528-5     Document Type: Article

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