Environment influence on Ti diffusion and layer degradation of a SiC/Ni2Si/TiW/Au contact structure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 966-970

  Baeri, A ^a   Raineri, V ^a   La Via, F L ^a   Puglisi, V ^b   Condorelli, G G ^b  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEGRADATION; DIFFUSION; ELECTRONIC STRUCTURE; INTERDIFFUSION (SOLIDS); METALLIZING; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; THERMODYNAMIC STABILITY; VACUUM; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL STABILITY; OHMIC CONTACT; SHEET RESISTANCE; THERMAL ANNEALING;

TITANIUM;

EID: 3242663599     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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