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Volumn 90, Issue 6, 2002, Pages 987-992

SiC microwave power technologies

Author keywords

Metal semiconductor field effect transistors (MESFETs); Microwave transistors; Power semiconductor devices; Silicon carbide; Static induction transistors

Indexed keywords

COSTS; FIELD EFFECT TRANSISTORS; MILITARY APPLICATIONS; POWER ELECTRONICS; SILICON CARBIDE; TRANSMITTERS;

EID: 0038642784     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2002.1021563     Document Type: Article
Times cited : (79)

References (16)
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  • 4
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    • Static induction transistors optimized for high voltage operation and high microwave power output
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    • Bencuya, I.1    Cogan, A.I.2    Butler, S.J.3    Regan, R.J.4
  • 5
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    • Regan, R.J.1    Butler, S.J.2    Armiento, C.A.3    Rock, F.C.4
  • 7
    • 0037966596 scopus 로고    scopus 로고
    • Application of silicon carbide to high power microwave devices and systems
    • June
    • A. W. Morse, "Application of silicon carbide to high power microwave devices and systems," in Proc. IEEE MTT-S Int. Micorwave Symp., June 2000, pp. 53-56.
    • (2000) Proc. IEEE MTT-S Int. Micorwave Symp. , pp. 53-56
    • Morse, A.W.1
  • 8
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    • Application of high power SiC transistors at radio frequencies
    • June
    • A. W. Morse, et al., "Application of high power SiC transistors at radio frequencies," in Proc. IEEE MTT-S Int. Micorwave Symp., June 1996, pp. 677-680.
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    • Morse, A.W.1
  • 10
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    • Surface induced instabilities in 4H-SiC microwave MESFETs
    • _, "Surface induced instabilities in 4H-SiC microwave MESFETs," Mater. Sci. Forum, vol. 338-342, pp. 1251-1254, 2000.
    • (2000) Mater. Sci. Forum , vol.338-342 , pp. 1251-1254
  • 11
    • 0032680907 scopus 로고    scopus 로고
    • Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs
    • July
    • O. Noblanc, C. Arnodo, C. Dua, E. Chartier, and C. Brylinski, "Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs," Mater. Sci. Eng., vol. B61-B62, pp. 339-344, July 1999.
    • (1999) Mater. Sci. Eng. , vol.B61-B62 , pp. 339-344
    • Noblanc, O.1    Arnodo, C.2    Dua, C.3    Chartier, E.4    Brylinski, C.5
  • 12
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    • Power density comparison between microwave power MESFETs processed on conductive and semi-insulating wafer
    • _, "Power density comparison between microwave power MESFETs processed on conductive and semi-insulating wafer," Mater. Sci. Forum, vol. 338-342, pp. 1247-1250, 2000.
    • (2000) Mater. Sci. Forum , vol.338-342 , pp. 1247-1250


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.